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Selective Hydrogen Etching Leads to 2D Bi(111) Bilayers on Bi2Se3: Large Rashba Splitting in Topolog

Ultrathin bilayers (BLs) of bismuth have been predicated to be a two-dimensional (2D) topological insulator. Here we report on a new...

Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulator

In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system....

Ultrathin (Bi1–xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio

Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1–xSbx)2Se3 ultrathin films...

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of a substrate, are investigated...

Optoelectronic characteristics of a near infrared light photodetector based on a topological insulat

In this study, we present a near infrared (NIR) light photodetector based on a topological insulator antimony telluride (Sb2Te3) film,...

Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si

A topological insulator (TI) is an exotic material that has a bulk insulating gap and metallic surface states with unique spin-momentum...

Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated....

Long-range interactions of bismuth growth on monolayer epitaxial graphene at room temperature

Long-range electronic interaction between Bismuth (Bi) adatoms on graphene formed on a 4H-SiC (0 0 0 1) substrate are clearly observed at...

Origin of p-type conductivity of Sbdoped ZnO nanorods and the local structure around Sb ions

To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The...

Band engineering magneto-resistance effect in Co:a-C films

Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were...

Selective Hydrogen Etching Leads to 2D Bi(111) Bilayers on Bi2Se3: Large Rashba Splitting in Topolog

Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulator

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Optoelectronic characteristics of a near infrared light photodetector based on a topological insulat

Long-range interactions of bismuth growth on monolayer epitaxial graphene at room temperature

Band engineering magneto-resistance effect in Co:a-C films

Selective Hydrogen Etching Leads to 2D Bi(111) Bilayers on Bi2Se3: Large Rashba Splitting in Topolog

Proximity Effect induced transport Properties between MBE grown (Bi1−xSbx)2Se3 Topological Insulator

Ultrathin (Bi1–xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Optoelectronic characteristics of a near infrared light photodetector based on a topological insulat

Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si

Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

Long-range interactions of bismuth growth on monolayer epitaxial graphene at room temperature

Origin of p-type conductivity of Sbdoped ZnO nanorods and the local structure around Sb ions

Band engineering magneto-resistance effect in Co:a-C films

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